VSKDU162_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)

VSKDU162/12PbF
Vishay High Power Products
HEXFRED^® Ultrafast Diodes, 100 A
(New INT-A-PAK Power Modules)
New INT-A-PAK
PRODUCT SUMMARY
V_R
V_F (typical)
t_rr (typical)
I_F(DC) at T_C
1200 V
2.5 V
150 ns
110 A at 100 °C
FEATURES
• Electrically isolated: DBC base plate
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style New INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
V_R
Continuous forward current
I_F
Single pulse forward current
I_FSM
Maximum power dissipation
P_D
RMS isolation voltage
Operating junction and storage
temperature range
V_ISOL
T_J, T_Stg
TEST CONDITIONS
T_C = 25 °C
T_C = 100 °C
Limited by junction temperature
T_C = 25 °C
T_C = 100 °C
50 Hz, circuit to base, all terminal shorted, t = 1 s
VALUES
1200
205
110
800
695
280
3500
- 40 to + 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
1200
I_F = 100 A
-
Maximum forward voltage
V_FM
I_F = 160 A
-
Maximum reverse leakage current
I_RM
T_J = 150 °C, V_R = 1200 V
-
TYP.
-
2.5
2.9
18
MAX.
-
3.2
3.9
30
UNITS
V
mA
Document Number: 94512
Revision: 04-May-10
For technical questions, contact: [e-mail]
www.vishay.com
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