VSKDU162 Datasheet, PDF (1/6 Pages) Vishay Siliconix – HEXFRED® Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules)

VSKDU162/12PbF
Vishay High Power Products
HEXFRED^® Ultrafast Diodes, 100 A
(New INT-A-PAK^TM Power Modules)
FEATURES
• Electrically isolated: DBC base plate
• 3500 V_RMS isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
New INT-A-PAK^TM
• Large creepage distances
• UL E78996 approved
PRODUCT SUMMARY
I_F(AV)
V_FM (typical) at I_C = 100 A, 25 °C
100 A
2.5 V
• Case style New INT-A-PAK
• Totally lead (Pb)-free
• Designed and qualified for industrial level
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_{F(AV) rect}
T_C
t_rr
V_RRM
T_J, T_Stg
VALUES
100
88
200
1200
- 40 to 150
UNITS
A
°C
ns
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VSKDU162/12PbF
12
V_RRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
1200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1250
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
I_F(AV)
Rectangular conduction, 50 % duty cycle
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Maximum forward voltage drop
V_FM
t_rr
Q_rr
I_REC
dI_(rec)M/dt
I_F = 100 A, T_J = 25 °C, t_p = 400 µs square wave
I_F = 160 A, T_J = 25 °C, t_p = 400 µs square wave
I_F = 160 A, T_J = 25 °C, - dI/dt = 200 A/µs, V_R = 200 V
TYP.
-
-
2.5
2.9
150
2000
20
-
MAX.
100
88
3.2
3.9
200
2400
22
300
UNITS
A
°C
V
ns
nC
A
A/µs
Document Number: 94512
Revision: 01-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
1