VSKDS409_11 Datasheet, PDF (1/7 Pages) Vishay Siliconix – ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A

VSKDS409/150
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 200 A
ADD-A-PAK
PRODUCT SUMMARY
I_F(AV)
200 A
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
The VSKDS409/150 Schottky rectifier doubler module has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 μs sine
V_F
200 Apk, T_J = 125 °C
T_J
Range
VALUES
200
150
20 000
0.85
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum static peak reverse voltage
SYMBOL
V_R
V_RRM
VSKDS409/150
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
Maximum dynamic peak reverse voltage
V_AV
TEST CONDITIONS
50 % duty cycle at T_C = 105 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 1.8 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
T_J = 25 °C, I_AS = 1.8 A, L = 10 mH
VALUES
200
20 000
2300
15
1
170
UNITS
A
mJ
A
V
Document Number: 94649
Revision: 13-Jan-11
For technical questions, contact: [e-mail]
www.vishay.com
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