VSB1045-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Low forward voltage drop, low power losses

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VSB1045-E3
Vishay General Semiconductor
Low Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.30 V at I_F = 5 A
TMBS^®
DO-201AD
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 10 A
T_J max.
Package
10 A
45 V
160 A
0.33 V
150 °C
DO-201AD
Diode variations
Single die
TYPICAL APPLICATION
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
V_RRM
I_F(DC) ⁽¹⁾
I_F(DC) ⁽²⁾
I_FSM
Operating junction and storage temperature range
T_J, T_STG
Notes
(1) _{With heatsink}
(2) _{Without heatsink, free air}
VSB1045
V1045
45
10
7.0
160
-40 to +150
UNIT
V
A
A
°C
Revision: 22-Apr-14
1
Document Number: 89488
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000