VS-MBRS340TRPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Schottky Rectifier

VS-MBRS340TRPbF
Vishay High Power Products
Schottky Rectifier, 3.0 A
SMC
Cathode
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
3.0 A
40 V
35 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
3.0 Apk, T_J = 125 °C
T_J
Range
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRS340TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
VALUES
3.0
40
1580
0.43
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-MBRS340TRPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_L = 118 °C, rectangular waveform
50 % duty cycle at T_L = 110 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 1.0 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
3.0
4.0
1580
80
6
1.0
UNITS
A
mJ
A
Document Number: 94321
Revision: 05-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
1