VS-MBRB4045CT-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Low forward voltage drop

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VS-MBRB4045CT-M3, VS-MBR4045CT-1-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
D²PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
VS-MBRB4045CT-M3
2
1 _Common 3
Anode cathode Anode
VS-MBR4045CT-1-M3
PRODUCT SUMMARY
I_F(AV)
2 x 20 A
V_R
45 V
V_F at I_F
0.58 V
I_RM max.
95 mA at 125 °C
T_J max.
150 °C
E_AS
Package
20 mJ
TO-263AB (D²PAK), TO-262AA
Diode variation
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
I_FRM
V_RRM
I_FSM
V_F
T_J
Rectangular waveform (per device)
T_C = 118 °C (per leg)
t_p = 5 μs sine
20 A_pk, T_J = 125 °C
Range
FEATURES
• 150 °C T_J operation
• Low forward voltage drop
• High frequency operation
• Center tap TO-220, D²PAK and TO-262
packages
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.

VALUES
40
40
45
900
0.58
-65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-MBRB4045CT-M3
VS-MBR4045CT-1-M3
45
UNITS
V
Revision: 03-Mar-14
1
Document Number: 94955
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000