VS-MBRB2035CTPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – Schottky Rectifier

VS-MBRB20..CTPbF, VS-MBR20..CT-1PbF Series
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Vishay Semiconductors
Schottky Rectifier, 2 x 10 A
VS-MBRB20..CTPbF
VS-MBR20..CT-1PbF
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
D²PAK
2
1 _Common 3
Anode cathode Anode
TO-262
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
2 x 10 A
35 V, 45 V
0.72 V
15 mA at 125 °C
150 °C
Common cathode
E_AS
8 mJ
FEATURES
• 150 °C T_J operation
• Center tap D²PAK and TO-262 packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This center tap Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
I_FRM
V_RRM
I_FSM
V_F
T_J
Rectangular waveform (per device)
T_C = 135 °C (per leg)
t_p = 5 μs sine
10 Apk, T_J = 125 °C
Range
VALUES
20
20
35/45
1060
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-MBRB2035CTPbF VS-MBRB2045CTPbF
VS-MBR2035CT-1PbF VS-MBR2045CT-1PbF
35
45
UNITS
V
Revision: 16-Jan-12
1
Document Number: 94305
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