English
Language : 

VS-MBRB1635-M3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High frequency operation
www.vishay.com
VS-MBRB1635-M3, VS-MBRB1645-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 16 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM
TJ max.
EAS
Package
Diode variation
16 A
35 V, 45 V
0.57 V
40 mA at 125 °C
150 °C
24 mJ
TO-263AB (D2PAK)
Single die
FEATURES
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This VS-MBRB16... Schottky rectifier has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
16 Apk, TJ = 125 °C
TJ
VALUES
16
35/45
1800
0.57
-65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRB1635-M3
35
VS-MBRB1645-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
TC = 134 °C, rated VR
Following any rated
5 μs sine or 3 μs rect. pulse load condition and with
rated VRRM applied
Surge applied at rated load condition half wave
single phase 60 Hz
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
16
1800
150
24
3.6
UNITS
A
mJ
A
Revision: 03-Mar-14
1
Document Number: 94949
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000