VS-MBRB15CTPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Low forward voltage drop

VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 7.5 A
TO-263AB (D²PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
VS-MBRB15..CTPbF
2
1 _Common 3
Anode cathode Anode
VS-MBR15..CT-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
2 x 7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
Common cathode
E_AS
7.0 mJ
FEATURES
• 150 °C T_J operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBR(B)15... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
t_p = 5 μs sine
7.5 A_pk, T_J = 125 °C
VALUES
15
35, 45
690
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V_R
V_RWM
VS-MBRB1535CTPbF
VS-MBR1535CT-1PbF
35
VS-MBRB1545CTPbF
VS-MBR1545CT-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average 
forward current
per leg
per device
I_F(AV)
Maximum peak one cycle 
non-repetitive surge
I_FSM
Non-repetitive avalanche energy per leg E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
T_C = 131 °C, rated V_R
5 μs sine or 3 μs Following any rated load condition and
rect. pulse
with rated V_RRM applied
Surge applied at rated load conditions halfwave, 
single phase, 60 Hz
T_J = 25 °C, I_AS = 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs 
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
7.5
15
690
150
7
2
UNITS
A
mJ
A
Revision: 18-Oct-16
1
Document Number: 94303
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000