VS-MBRB1035-M3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Low forward voltage drop

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VS-MBRB1035-M3, VS-MBRB1045-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM
T_J max.
E_AS
Package
Diode variation
10 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
8 mJ
TO-263AB (D²PAK)
Single die
FEATURES
• 150 °C T_J operation
• TO-220 and D²PAK packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
I_FRM
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
T_C = 135 °C
t_p = 5 μs sine
10 A_pk, T_J = 125 °C
Range
VALUES
10
20
35/45
1060
0.57
- 65 to 150
UNITS
A
V
A
V
C°
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-MBRB1035-M3
35
VS-MBRB1045-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
Peak repetitive forward current
I_F(AV)
I_FRM
Non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
T_C = 135 °C, rated V_R
Rated V_R, square wave, 20 kHz, T_C = 135 °C
Following any rated load
5 μs sine or 3 μs rect. pulse condition and with rated
V_RRM applied
Surge applied at rated load conditions halfwave, 
single phase, 60 Hz
T_J = 25 °C, I_AS = 2 A, L = 4 mH
Current decaying linearly to zero in 1 μs 
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
10
20
UNITS
1060
A
150
8
mJ
2
A
Revision: 28-Feb-14
1
Document Number: 94947
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000