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VS-MBR25CTPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Low forward voltage drop
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
TO-220AB
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
Anode
2
Anode
1 Common 3
cathode
TO-220AB
2 x 15 A
35 V, 45 V
See Electrical table
40 mA at 125 °C
150 °C
Common cathode
16 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform (per device)
VRRM
IFRM
TC = 130 °C (per leg)
IFSM
tp = 5 μs sine
VF
30 Apk, TJ = 125 °C
TJ
Range
VALUES
30
35/45
30
1060
0.73
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-MBR2535CTPbF VS-MBR2535CT-N3 VS-MBR2545CTPbF VS-MBR2545CT-N3 UNITS
Maximum DC reverse
voltage
VR
35
35
45
45
V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
TC = 130 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 130 °C
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated VRRM
applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
30
30
1060
UNITS
A
150
16
mJ
2
A
Revision: 30-Aug-11
1
Document Number: 94291
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000