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VS-HFA210NJ60CPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Designed and qualified for industrial level
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VS-HFA210NJ60CPbF
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 210 A
Lug
terminal
anode 1
Lug
terminal
anode 2
FEATURES
• Very low Qrr and trr
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-244
Base common
cathode
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
PRODUCT SUMMARY
IF(AV)
210 A
VR
IF(DC) at TC
600 V
120 A at 100 °C
Package
TO-244 (TO-244AB)
Circuit
Two diodes common cathode
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dIF/dt simplifies
the calculations of losses in the operating conditions.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for power converters, motors drives and other
applications where switching losses are significant portion
of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
Single pulse forward current
IFSM
Non-repetitive avalanche energy
EAS
Maximum power dissipation
PD
Operating junction and storage
temperature range
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum TJ
TC = 25 °C
TC = 100 °C
MAX.
600
235
120
600
2.2
463
185
-55 to +150
UNITS
V
A
mJ
W
°C
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode 
breakdown voltage
VBR
IR = 100 μA
600
IF = 105 A
-
Maximum forward voltage
VFM
IF = 210 A
See fig. 1
-
IF = 105 A, TJ = 125 °C
-
Maximum reverse leakage current
IRM
TJ = 125 °C, VR = 480 V
See fig. 2
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
From top of terminal hole to mounting plane
-
TYP.
-
1.38
1.6
1.3
1.8
200
6.0
MAX. UNITS
-
1.9
V
2.25
1.56
6.0
mA
300
pF
-
nH
Revision: 28-Oct-16
1
Document Number: 94062
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000