VS-GT200TP065N Datasheet, PDF (1/9 Pages) Vishay Siliconix – INT-A-PAK, Half Bridge-Trench IGBT, 200 A

www.vishay.com
VS-GT200TP065N
Vishay Semiconductors
INT-A-PAK, Half Bridge - Trench IGBT, 200 A
New INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C (DC) at T_C = 80 °C
V_CE(on) (typical)
at I_C = 200 A, T_J = 25 °C
Speed
Package
Circuit
650 V
166 A
1.9 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
FEATURES
• Trench IGBT
• Very low V_CE(on)
• 5 μs short circuit capability
• Positive V_CE(on) temperature coefficient
• FRED Pt^® anti-parallel diode low Q_rr and low switching
energy
• Industry and standard package
• T_J = 175 °C
• UL pending
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
SYMBOL
V_CES
I_C
I_CM
I_LM
I_F
Maximum non-repetitive peak current
Gate to emitter voltage
Maximum power dissipation
RMS isolation voltage
Operating junction temperature range
IGBT
Diode
I_FSM
V_GE
P_D
V_ISOL
T_J
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
10 ms sine or 6 ms rectangular pulse,
T_J = 25 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_J = 25 °C, f = 50 Hz, t = 1 s
MAX.
650
221
166
320
320
138
103
700
± 20
600
380
288
183
3500
-40 to +175
UNITS
V
A
V
W
V
°C
Revision: 11-Jun-15
1
Document Number: 93567
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000