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VS-8EWH02FN-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt®
VS-8EWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
D-PAK (TO-252AA)
2, 4
13
N/C Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
D-PAK (TO-252AA)
8A
200 V
0.97 V
23 ns
175 °C
Single die
FEATURES
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Qrr and soft
recovery
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 156 °C
TJ = 25 °C
TC = 156 °C, f = 20 kHz, d = 50 %
VALUES
200
8
140
16
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
Forward voltage
IF = 8 A
VF
IF = 8 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT
VR = 600 V
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
TYP.
-
0.91
0.75
-
6
22
8
MAX. UNITS
-
0.97
V
0.85
5
μA
60
-
pF
-
nH
Document Number: 93259 For technical questions within your region, please contact one of the following:
Revision: 31-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000