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VS-8CWH02FNHM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 2 x 4 A FRED Pt®
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VS-8CWH02FNHM3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 4 A FRED Pt®
D-PAK (TO-252AA)
Base
common
cathode
2
1
2
3
Anode
Common
cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
D-PAK (TO-252AA)
2x4A
200 V
0.95 V
23 ns
175 °C
Common cathode
FEATURES
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Qrr and
soft recovery
• Low leakage current
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 164 °C
TJ = 25 °C
VALUES
200
8
80
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
IF = 4 A
Forward voltage per leg
IF = 8 A
VF
IF = 4 A, TJ = 150 °C
IF = 8 A, TJ = 150 °C
VR = VR rated
Reverse leakage current per leg
IR
TJ = 125 °C, VR = VR rated
TJ = 150 °C, VR = VR rated
Junction capacitance per leg
CT
VR = 200 V
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
-
-
-
TYP.
-
0.87
0.95
0.71
0.8
-
-
-
17
8
MAX. UNITS
-
0.95
1.10
V
0.80
1.0
4
40
μA
80
-
pF
-
nH
Revision: 02-Aug-12
1
Document Number: 94741
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000