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VS-85CNQ015APBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – Optimized for OR-ing applications
VS-85CNQ015A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 40 A
VS-85CNQ015APbF
D-61-8
VS-85CNQ015ASMPbF
D-61-8-SM
VS-85CNQ015ASLPbF
Base
common
cathode
1
2
Anode Common
1
cathode
3
Anode
2
1
2
Anode Common
1
cathode
3
Anode
2
Base
common
cathode
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• New fully transfer-mold low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
D-61-8-SL
PRODUCT SUMMARY
IF(AV)
VR
IRM
1
Anode
1
3
Anode
2
2 x 40 A
15 V
1000 mA at 100 °C
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for ultra low forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 μs sine
VF
40 Apk, TJ = 75 °C (per leg)
TJ
Range
VALUES
80
15
5200
0.32
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-85CNQ015APbF
15
25
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94260
Revision: 16-Apr-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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