English
Language : 

VS-6CWQ04FNHM3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Popular D-PAK outline
www.vishay.com
VS-6CWQ04FNHM3
Vishay Semiconductors
Schottky Rectifier, 2 x 3.5 A
Base
common
cathode
4
D-PAK (TO-252AA)
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
2
Common
cathode
1
3
Anode
Anode
D-PAK (TO-252AA)
2 x 3.5 A
40 V
See Electrical table
24 mA at 125 °C
150 °C
Common cathode
8 mJ
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• High frequency operation
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-6CWQ04FNHM3 surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF
3 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
7
40
500
0.49
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-6CWQ04FNHM3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current 
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle 
non-repetitive surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 1 A, L = 16 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
3.5
7
500
80
8.0
1.0
UNITS
A
mJ
A
Revision: 21-Aug-13
1
Document Number: 94744
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000