VS-6CWH02FN-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Ultrafast Rectifier, 2 x 3 A FRED Pt®

VS-6CWH02FN-M3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt^®
D-PAK (TO-252AA)
Base
common
cathode
4
2
Common
cathode
1
3
Anode
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
D-PAK (TO-252AA)
2x3A
200 V
1.0 V
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
V_RRM
I_F(AV)
I_FSM
I_FM
T_J, T_Stg
TEST CONDITIONS
Total device, rated V_R, T_C = 159 °C
Rated V_R , square wave, 20 kHz, T_C = 159 °C
MAX.
200
6
50
6
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
I_F = 3 A
Forward voltage
I_F = 3 A, T_J = 125 °C
V_F
I_F = 6 A
I_F = 6 A, T_J = 125 °C
Reverse leakage current
V_R = V_R rated
I_R
T_J = 125 °C, V_R = V_R rated
Junction capacitance
C_T
V_R = 200 V
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
12
8.0
MAX.
-
1
0.9
1.2
1.08
5
100
-
-
UNITS
V
μA
pF
nH
Document Number: 93498 For technical questions within your region, please contact one of the following:
Revision: 31-Mar-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000