VS-62CTQ030PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 30 A

www.vishay.com
VS-62CTQ030PbF, VS-62CTQ030-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
Base ₂
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
TO-220AB
2 x 30 A
30 V
0.44 V
350 mA at 125 °C
150 °C
Common cathode
13 mJ
FEATURES
• 150 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FRM
I_FSM
V_F
T_J
Rectangular waveform (per device)
T_C = 120 °C (per leg)
t_p = 5 μs sine
30 A_pk, T_J = 125 °C
Range
VALUES
60
30
60
1500
0.44
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-62CTQ030PbF VS-62CTQ030-N3
30
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Peak repetitive forward current per leg
I_FRM
Maximum peak one cycle non-repetitive
surge current per leg
I_FSM
Non-repetitive avalanche energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 120 °C, rectangular waveform
Rated V_R, square wave, 20 kHz, T_C = 127 °C
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse V_RRM applied
T_J = 25 °C, I_AS = 3 A, L = 2.9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
30
60
60
1500
300
13
3
UNITS
A
mJ
A
Revision: 29-Aug-11
1
Document Number: 94242
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000