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VS-48CTQ060SPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Performance Schottky Rectifier
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VS-48CTQ060SPbF, VS-48CTQ060-1PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
TO-263AB (D2PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-48CTQ060SPbF
2
1 Common 3
Anode cathode Anode
VS-48CTQ060-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
2 x 20 A
60 V
0.58 V
89 mA at 125 °C
150 °C
Common cathode
EAS
13
FEATURES
• 150 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
20 Apk, TJ = 125 °C (per leg)
Range
VALUES
40
60
1000
0.58
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-48CTQ060SPbF
VS-48CTQ060-1PbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
per leg
forward current, see fig. 5 per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 111 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated 
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
40
1000
260
13
1.50
UNITS
A
mJ
A
Revision: 08-Dec-14
1
Document Number: 94230
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000