VS-48CTQ060S-M3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Performance Schottky Rectifiers

www.vishay.com
VS-48CTQ060S-M3, VS48CTQ060-1-M3
Vishay Semiconductors
High Performance Schottky Rectifiers, 2 x 20 A
D²PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
VS-48CTQ060S-M3
2
1 _Common 3
Anode cathode Anode
VS-48CTQ060-1-M3
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
E_AS
Package
2 x 20 A
60 V
0.58 V
89 mA at 125 °C
150 °C
13 mJ
TO-263AB (D² PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 150 °C T_J operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.




MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
20 A_pk, T_J = 125 °C (per leg)
T_J
Range
VALUES
40
60
1000
0.58
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-48CTQ060S-M3
VS-48CTQ060-1-M3
60
UNITS
V
Revision: 28-Feb-14
1
Document Number: 94944
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000