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VS-47CTQ020SPBF_15 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 2 x 20 A
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VS-47CTQ020SPbF, VS-47CTQ020-1PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
TO-263AB (D2PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-47CTQ020SPbF
2
1 Common 3
Anode cathode Anode
VS-47CTQ020-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
2 x 20 A
VR
20 V
VF at IF
0.34 V
IRM max.
310 mA at 125 °C
TJ max.
150 °C
Diode variation
Common cathode
EAS
18
FEATURES
• 150 °C TJ operation
• Center tap configuration
• Optimized for 3.3 V application
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
3.3 V output power supplies. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
20 Apk, TJ = 125 °C
VALUES
40
20
1000
0.34
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
125 °C
150 °C
VS-47CTQ020SPbF
VS-47CTQ020-1PbF
20
10
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 3 A, L = 3 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
40
1000
250
18
3
UNITS
A
mJ
A
Revision: 09-Dec-14
1
Document Number: 94228
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000