VS-43CTQSPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Low forward voltage drop

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VS-43CTQ...SPbF, VS-43CTQ...-1PbF Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
TO 263AB (D²PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
2
1 _Common 3
Anode cathode Anode
VS-43CTQ...SPbF
VS-43CTQ...-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
2 x 20 A
80 V, 100 V
0.67 V
11 mA at 125 °C
175 °C
Common cathode
E_AS
7.50 mJ
FEATURES
• 175 °C T_J operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, freewheeling diodes, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
t_p = 5 μs sine
20 A_pk, T_J = 125 °C (per leg)
Range
VALUES
40
80/100
850
0.67
-55 to +175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-43CTQ080SPbF VS-43CTQ100SPbF
VS-43CTQ080-1PbF VS-43CTQ100-1PbF
80
100
UNITS
A
V
A
V
°C
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
per leg
forward current
See fig. 5
per device
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
I_F(AV)
I_FSM
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse _{VRRM applied}
T_J = 25 °C, I_AS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
20
40
850
275
7.50
0.50
UNITS
A
mJ
A
Revision: 15-Aug-15
1
Document Number: 94224
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000