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VS-40EPS16PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Voltage, Input Rectifier Diode, 40 A
VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 40 A
2
3
1
TO-247AC modified
Base
cathode
2
23
1
TO-247AC
Base
cathode
+
2
1
Cathode
3
Anode
VS-40EPS16PbF
VS-40EPS16-M3
1
Anode -
3
- Anode
VS-40APS16PbF
VS-40APS16-M3
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins), TO-247AC
IF(AV)
VR
VF at IF
40 A
1600 V
1.14 V
IFSM
475 A
TJ max.
Diode variation
150 °C
Single die
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).







MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VRRM
IFSM
VF
20 A, TJ = 25 °C
TJ
VALUES
40
1600
475
1.0
-40 to +150
VOLTAGE RATINGS
PART NUMBER
VS-40EPS16PbF
VS-40EPS16-M3
VS-40APS16PbF
VS-40APS16-M3
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
1700
UNITS
A
V
A
V
°C
IRRM
AT 150 °C
mA
1
Revision: 12-Feb-16
1
Document Number: 94344
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000