English
Language : 

VS-40EPF0.PBF Datasheet, PDF (1/10 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 40 A
VS-40EPF0.PbF Series, VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 40 A
2
3
1
TO-247AC modified
Base
cathode
2
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-247AC modified (2 pins)
40 A
200 V, 400 V, 600 V
1.25 V
475 A
60 ns
150 °C
Single die
0.5
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-40EPF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
trr
TJ
Sinusoidal waveform
10 A, TJ = 25 °C
1 A, - 100 A/μs
VALUES
40
200 to 600
475
1
60
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-40EPF02PbF, VS-40EPF02-M3
VS-40EPF04PbF, VS-40EPF04-M3
VS-40EPF06PbF, VS-40EPF06-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
IRRM
AT 150 °C
mA
8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
40
400
475
800
1131
11 310
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1
Document Number: 94102
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000