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VS-40CTQ150S-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High frequency operation
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VS-40CTQ150S-M3, VS-40CTQ150-1-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
TO-263AB (D2PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-40CTQ150S-M3
2
1 Common 3
Anode cathode Anode
VS-40CTQ150-1-M3
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
VF at IF
2 x 20 A
150 V
0.71 V
IRM
TJ max.
Diode variation
15 mA at 125 °C
175 °C
Common cathode
EAS
1 mJ
FEATURES
• Very low forward voltage drop
• 175 °C TJ operation
• Center tap TO-220 package
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
20 Apk, TJ = 125 °C (per leg)
VALUES
40
150
1500
0.71
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-40CTQ150S-M3
VS-40CTQ150-1-M3
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current  per leg
See fig. 5
per device
IF(AV)
Maximum peak one cycle non-repetitive surge
current per leg See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
VALUES UNITS
20
50 % duty cycle at TC = 140 °C, rectangular waveform
40
5 μs sine or 3 μs rect. pulse Following any rated
1500
A
load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
250
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH
1.0
mJ
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.5
A
Revision: 29-Jul-14
1
Document Number: 95732
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000