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VS-409CNQPBF Datasheet, PDF (1/4 Pages) Vishay Siliconix – Low forward voltage drop
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VS-409CNQ...PbF Series
Vishay Semiconductors
High Performance Schottky Rectifier, 400 A
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
Base common
cathode
PRODUCT SUMMARY
IF(AV)
400 A
VR
Package
135 V, 150 V
TO-244
Circuit
Two diodes common cathode
FEATURES
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-409CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
Range
tp = 5 μs sine
200 Apk, TJ = 125 °C (per leg)
Range
VALUES
400
135/150
20 000
0.75
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-409CNQ135PbF
135
VS-409CNQ150PbF
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward
current (fig. 5)
per leg
per device
IF(AV)
50 % duty cycle at TC = 129 °C, rectangular waveform
VALUES
200
400
Maximum peak one cycle non-repetitive 
surge current per leg (fig. 7)
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
5 μs sine or 3 μs rect. pulse Following any rated load 20 000
IFSM
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
2300
EAS
TJ = 25 °C, IAS = 5.5 A, L = 1 mH
15
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
UNITS
A
mJ
A
Revision: 26-Mar-14
1
Document Number: 94207
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000