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VS-3EJH02HM3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Hyperfast Rectifier, 3 A FRED Pt
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VS-3EJH02HM3
Vishay Semiconductors
Hyperfast Rectifier, 3 A FRED Pt®
Cathode
Anode
DO-221AC (SlimSMA)
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specific for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr
TJ max.
Diode variation
DO-221AC (SlimSMA)
3A
200 V
0.74 V
30 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
VRRM
IF(AV)
IFSM
TJ, TStg
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 145 °C (1)
TJ = 25 °C
VALUES
200
3
85
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
VBR,
VR
VF
IR
CT
IR = 100 μA
IF = 3 A
IF = 3 A, TJ = 125 °C
VR = VR rated
TJ = 125 °C, VR = VR rated
VR = 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.86
0.74
-
1
13
MAX.
-
0.93
0.78
2
8
-
UNITS
V
μA
pF
Revision: 17-Oct-16
1
Document Number: 94878
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000