VS-32CTQS-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High frequency operation

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VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
D²PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
VS-32CTQ...S-M3
2
1 _Common 3
Anode cathode Anode
VS-32CTQ...-1-M3
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
E_AS
Package
2 x 15 A
25 V, 30 V
0.40 V
97 mA at 125°C
150 °C
13 mJ
TO-263AB (D²PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 150 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
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MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
15 A_pk, T_J = 125 °C
T_J
Range
VALUES
30
25, 30
900
0.40
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-32CTQ025S-M3 VS-32CTQ030S-M3
VS-32CTQ025-1-M3 VS-32CTQ030-1-M3
25
30
UNITS
V
Revision: 15-Aug-15
1
Document Number: 94936
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000