VS-31DQ09_15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier

VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
C-16
Cathode
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
DO-201AD (C-16)
3.3 A
90 V, 100 V
See Electrical table
3.0 mA at 125 °C
150 °C
Single die
3.0 mJ
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-31DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
t_p = 5 μs sine
3 Apk, T_J = 25 °C
VALUES
3.3
90/100
210
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V_R
V_RWM
VS-31DQ09
90
VS-31DQ09-M3
90
VS-31DQ10
100
VS-31DQ10-M3 UNITS
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 6
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_L = 108 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 1 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
3.3
210
34
3.0
0.5
UNITS
A
mJ
A
Revision: 19-Sep-11
1
Document Number: 93321
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