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VS-30CTQ0HN3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High frequency operation
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VS-30CTQ0..HN3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
Diode variation
2 x 15 A
35 V, 40 V, 45 V
0.56 V
15 mA at 125 °C
175 °C
27 mJ
TO-220AC
Common cathode
FEATURES
• 175 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• AEC-Q101 qualified meets JESD 201 class 2 whisker test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
20 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
30
35 to 45
1060
0.56
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-30CTQ035HN3 VS-30CTQ040HN3 VS-30CTQ045HN3
Maximum DC reverse voltage
VR
35
40
45
Maximum working peak reverse voltage VRWM
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current 
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current 
IFSM
See fig. 7
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 127 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES UNITS
30
1060
A
256
20
mJ
3.0
A
Revision: 05-Mar-14
1
Document Number: 94959
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000