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VS-30CTQ080SPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Performance Schottky Rectifier
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VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
TO-263AB (D2PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-30CTQ...SPbF
2
1 Common 3
Anode cathode Anode
VS-30CTQ...-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
2 x 15 A
VR
80 V to 100 V
VF at IF
0.67 V
IRM
7 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
7.5 mJ
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
15 Apk, TJ = 125 °C (per leg)
Range
VALUES
30
80/100
850
0.67
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-30CTQ080SPbF VS-30CTQ100SPbF
VS-30CTQ080-1PbF VS-30CTQ100-1PbF
80
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward
current, see fig. 5
per device
per leg
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 129 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
30
15
850
275
7.50
0.50
UNITS
A
mJ
A
Revision: 08-Dec-14
1
Document Number: 94193
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000