VS-2EGH02HM3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Ultrafast Rectifier, 2 A FRED Pt

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VS-2EGH02HM3
Vishay Semiconductors
Ultrafast Rectifier, 2 A FRED Pt^®
DO-214AA (SMB)
Cathode
Anode
FEATURES
• Ultrafast recovery time, reduced Q_rr and soft
recovery
• 175 °C maximum operating junction temperature
• Specific for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
DO-214AA (SMB)
2A
200 V
0.66 V
24 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop, ultrafast
recovery time, and fast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, output
operation, inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
Note
(1) _{Mounted on PCB with 6 mm x 3.5 mm lands}
SYMBOL
V_RRM
I_F(AV)
I_FSM
T_J, T_Stg
TEST CONDITIONS
T_L = 150 °C ⁽¹⁾
T_J = 25 °C
VALUES
200
2
70
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Critical rate if rise of reverse voltage
V_BR,
V_R
V_F
I_R
C_T
dV/dt_τ
I_R = 100 μA
I_F = 2 A
I_F = 2 A, T_J = 150 °C
V_R = V_R rated
T_J = 150 °C, V_R = V_R rated
V_R = 200 V
MIN.
200
-
-
-
-
-
-
TYP.
-
0.84
0.66
-
-
12
-
MAX.
-
0.9
0.7
2
20
-
10 000
UNITS
V
μA
pF
V/μs
Revision: 20-Jul-16
1
Document Number: 94859
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000