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VS-2EFH01-M3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Hyperfast Rectifier, 2 A FRED Pt
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VS-2EFH01-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt®
DO-219AB (SMF)
Cathode
Anode
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF (typ. 125 °C)
trr
TJ max.
Diode variation
DO-219AB (SMF)
2A
100 V
0.75 V
25 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Operating junction and storage temperature range TJ, TStg
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 150 °C (1)
TJ = 25 °C
VALUES
100
2
50
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR, VR IR = 100 μA
100
Forward voltage
IF = 2 A
-
VF
IF = 2 A, TJ = 125 °C
-
Reverse leakage current
VR = VR rated
-
IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT
VR = 100 V
-
TYP.
-
0.88
0.75
-
0.5
8
MAX.
-
0.95
0.82
2
8
-
UNITS
V
μA
pF
Revision: 28-Jun-16
1
Document Number: 95787
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000