VS-25TTS16SPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Thyristor Surface Mount, Phase Control SCR, 16 A

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VS-25TTS16SPbF
Vishay Semiconductors
Thyristor Surface Mount, Phase Control SCR, 16 A
4
Anode
2, 4
2
3
1
TO-263AB (D²PAK)
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
TO-263AB (D²PAK)
Single SCR
16 A
1600 V
1.25 V
45 mA
-40 to 125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and
JEDEC^®-JESD 47
qualified
according
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-25TTS16SPbF of silicon controlled rectifiers is
specifically designed for medium power switching and
phase control applications. The glass passivation
technology used has reliable operation up to 125 °C junction
temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
3.5
Aluminum IMS, R_thCA = 15 °C/W
8.5
Aluminum IMS with heatsink, R_thCA = 5 °C/W
16.5
Note
• T_A = 55 °C, T_J = 125 °C, footprint 300 mm²
THREE-PHASE BRIDGE
5.5
13.5
25.0
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_RMS
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
16 A, T_J = 25 °C
dI/dt
T_J
VALUES
16
25
1600
350
1.25
500
150
-40 to +125
VOLTAGE RATINGS
PART NUMBER
VS-25TTS16SPbF
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
1600
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
1600
UNITS
A
UNITS
A
V
A
V
V/μs
A/μs
°C
I_RRM/I_DRM,
AT 125 °C
mA
10
Revision: 09-Jul-15
1
Document Number: 94679
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000