VS-25TTS08PBF_15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR

VS-25TTS..PbF Series, VS-25TTS..-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 25 A
2
(A)
1 ²³
TO-220AB
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
1 (K) (G) 3
TO-220AB
Single SCR
16 A
800 V, 1200 V
1.25 V
45 mA
- 40 °C to 125 °C
FEATURES
• Designed and qualified according to
JEDEC-JESD47
• 125 °C max. operating junction temperature
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Available
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge.
DESCRIPTION
The VS-25TTS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C,
common heatsink of 1 °C/W
18
THREE-PHASE BRIDGE
22
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_RMS
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
16 A, T_J = 25 °C
dI/dt
T_J
VALUES
16
25
800/1200
320
1.25
500
150
- 40 to 125
VOLTAGE RATINGS
PART NUMBER
VS-25TTS08PbF, VS-25TTS08-M3
VS-25TTS12PbF, VS-25TTS12-M3
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
UNITS
A
V
A
V
V/µs
A/µs
°C
I_RRM/I_DRM
AT 125 °C
mA
10
Revision: 26-Jul-13
1
Document Number: 94385
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000