VS-25MT060WFAPBF Datasheet, PDF (1/10 Pages) Vishay Siliconix – IGBT MTP

www.vishay.com
VS-25MT060WFAPbF
Vishay Semiconductors
“Full Bridge” IGBT MTP (Warp Speed IGBT), 50 A
MTP
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on)
Speed
Package
Circuit
600 V
69 A
2.22 V
8 kHz to 30 kHz
MTP
Full bridge
FEATURES
• Gen 4 warp speed IGBT technology
• HEXFRED^® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMT thermistor
• Al₂O₃ DBC
• Very low stray inductance design for high speed operation
• Speed 8 kHz to 30 kHz > 20 kHz hard switching, > 200 kHz
resonant mode
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
per single IGBT
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 100 °C
Any terminal to case, t = 1 minute
T_C = 25 °C
T_C = 100 °C
MAX.
600
69
46
200
200
25
200
± 20
2500
195
78
UNITS
V
A
V
W
Revision: 10-Jun-15
1
Document Number: 94539
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000