VS-25ETS08S-M3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Input rectification

VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 25 A
2
3
1
TO-263AB (D²PAK)
Base
cathode
2
1
Anode
3
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_FSM
T_j max.
Diode variation
TO-263AB (D²PAK)
25 A
800 V, 1000 V, 1200 V
1.14 V
300 A
150 °C
Single die
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according to
JEDEC^®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay switches and output rectifiers which are available
in identical package outlines
DESCRIPTION
The VS-25ETS..S-M3 rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C 
common heatsink of 1 °C/W
20
THREE-PHASE BRIDGE
23
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Sinusoidal waveform
10 A, T_J = 25 °C
VALUES
25
800 to 1200
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-25ETS08S-M3
VS-25ETS10S-M3
VS-25ETS12S-M3
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
I_RRM AT 150 °C
mA
1
Revision: 12-Feb-16
1
Document Number: 94890
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000