VS-21DQ06 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low profile, axial leaded outline

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VS-21DQ06, VS-21DQ06-M3
Vishay Semiconductors
Schottky Rectifier, 2 A
DO-204AL
Cathode
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
DO-204AL (DO-41)
2A
60 V
0.55 V
10 mA at 125 °C
150 °C
Single die
4.0 mJ
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-21DQ06... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
V_F
T_J
Rectangular waveform
2 Apk, T_J = 125 °C
Range
VALUES
2
60
0.55
- 40 to 150
UNITS
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-21DQ06
60
VS-21DQ06-M3
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
See fig. 4
I_F(AV)
50 % duty cycle at T_C = 106 °C, rectangular waveform
2
Maximum peak one cycle
non-repetitive surge current
See fig. 6
5 µs sine or 3 µs rect. pulse
Following any rated load 340
I_FSM
condition and with rated
10 ms sine or 6 ms rect. pulse V_RRM applied
60
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS
T_J = 25 °C, I_AS = 1 A, L = 8 mH
4.0
I_AR
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
0.5
UNITS
A
mJ
A
Revision: 21-Sep-11
1
Document Number: 93280
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