VS-20WT04FN Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 20 A

20UT04, 20WT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
20UT04
20WT04FN
Base
cathode
4
1
3
Anode ₂ Anode
Cathode
I-PAK (TO-251AA)
Base
cathode
4
2
1 ^Cathode 3
Anode
Anode
D-PAK (TO-252AA)
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V_F vs. I_R trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Qualified for AEC Q101
PRODUCT SUMMARY
I_F(AV)
V_RRM
Maximum V_F at 20 A at 125 °C ⁽¹⁾
Note
(1) _{Measured connecting 2 anode pins}
20 A
45 V
0.530 V
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
20 Apk, T_J = 125 °C
(typical, measured connecting 2 anode pins)
T_J
Range
VALUES
45
0.480
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V_R
TEST CONDITIONS
T_J = 25 °C
20UT04
20WT04FN
45
UNITS
V
Document Number: 94573
Revision: 20-Jan-09
For technical questions, contact: [e-mail]
www.vishay.com
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