VS-20MT120UFP Datasheet, PDF (1/12 Pages) Vishay Siliconix – IGBT MTP

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VS-20MT120UFP
Vishay Semiconductors
“Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 40 A
MTP
PRODUCT SUMMARY
V_CES
I_C at T_C = 25 °C
V_CE(on)
Speed
Package
Circuit
1200 V
40 A
3.29 V
8 kHz to 30 kHz
MTP
Full bridge
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V_CE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED^® antiparallel diodes with ultrasoft
reverse recovery
• Low diode V_F
• Square RBSOA
• Aluminum nitride DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
Maximum power dissipation (only IGBT)
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 106 °C
T_C = 106 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
MAX.
1200
40
20
100
100
25
100
± 20
2500
240
96
UNITS
V
A
V
W
Revision: 10-Jun-15
1
Document Number: 94505
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000