VS-20MT120UFAPBF Datasheet, PDF (1/11 Pages) Vishay Siliconix – “Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 20 A

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VS-20MT120UFAPbF
Vishay Semiconductors
“Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 20 A
MTP
PRODUCT SUMMARY
V_CES
I_C at T_C = 96 °C
V_CE(on) (typical)
at I_C = 20 A, 25 °C
Speed
Package
Circuit
1200 V
20 A
3.29 V
8 kHz to 30 kHz
MTP
Full bridge
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V_CE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED^® antiparallel diodes with ultrasoft
reverse recovery
• Low diode V_F
• Square RBSOA
• Al₂O₃ DBC substrate
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
V_CES
I_C
I_CM
I_LM
I_FM
V_GE
V_ISOL
Maximum power dissipation (only IGBT)
P_D
Operating junction temperature range
T_J
TEST CONDITIONS
T_C = 96 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
MAX.
1200
20
100
100
100
± 20
2500
240
96
-40 to +150
UNITS
V
A
V
W
°C
Revision: 10-Jun-15
1
Document Number: 94470
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000