VS-20L15TSPBF_15 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 20 A

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VS-20L15TSPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
TO-263AB (D²PAK)
1
3
N/C
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
E_AS
Package
Diode variation
20 A
15 V
0.33 V
600 mA at 100 °C
125 °C
10 mJ
TO-263AB (D²PAK)
Single die
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
Rectangular waveform
t_p = 5 μs sine
V_F
19 A_pk, T_J = 125 °C (typical)
T_J
Range
FEATURES
• 125 °C T_J operation (V_R < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
VALUES
20
15
700
0.25
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
TEST CONDITIONS
T_J = 100 °C
VS-20L15TSPbF
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current 
See fig. 5
I_F(AV)
Maximum peak one cycle non-repetitive 
surge current

I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
50 % duty cycle at T_C = 85 °C, rectangular waveform
20
5 μs sine or 3 μs rect. pulse
Following any rated load 700
condition and with rated
10 ms sine or 6 ms rect. pulse V_RRM applied
330
T_J = 25 °C, I_AS = 2 A, L = 6 mH
10
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
2
UNITS
A
mJ
A
Revision: 24-Jul-14
1
Document Number: 94166
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000