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VS-20L15GPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier
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VS-STPS20L15GPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
TO-263AB (D2PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
Diode variation
20 A
15 V
0.33 V
600 mA at 100 °C
125 °C
10 mJ
TO-263AB (D2PAK)
Single die
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for
ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
19 Apk, TJ = 125 °C (typical)
Range
VALUES
20
15
700
0.25
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
TEST CONDITIONS VS-STPS20L15GPbF
TJ = 100 °C
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
SYMBOL
IF(AV)
IFSM
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 85 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 2 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
700
330
10
2
UNITS
A
mJ
A
Revision: 29-Jul-14
1
Document Number: 94326
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000