VS-20ETS16PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Voltage, Input Rectifier Diode, 20 A

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VS-20ETS16PbF, VS-20ETS16-M3
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 20 A
2
TO-220AC
3
1
Base
cathode
2
1
3
Cathode Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_FSM
T_J max.
Diode variation
TO-220AC
20 A
1600 V
1.1 V
300 A
150 °C
Single die
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC^®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C 
common heatsink of 1 °C/W
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Sinusoidal waveform
I_FSM
V_F
10 A, T_J = 25 °C
T_J
VALUES
20
1600
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETS16PbF
VS-20ETS16-M3
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
1600
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
I_RRM
AT 150 °C
mA
1
Revision: 11-Feb-16
1
Document Number: 93405
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000