VS-20CTQ150PBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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VS-20CTQ150SPbF, VS-20CTQ150-1PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
TO-263AB (D²PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
VS-20CTQ150SPbF
2
1 _Common 3
Anode cathode Anode
VS-20CTQ150-1PbF
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
E_AS
Package
2 x 10 A
150 V
0.66 V
5.0 mA at 125 °C
175 °C
1.0 mJ
TO-263AB (D²PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 175 °C T_J operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
t_p = 5 μs sine
10 A_pk, T_J = 125 °C (per leg)
Range
VALUES
20
150
1030
0.66
-55 to +175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-20CTQ150SPbF
VS-20CTQ150-1PbF
150
UNITS
A
V
A
V
°C
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current 
See fig. 5
per leg
per device
Maximum peak one cycle
non-repetitive surge current per leg

See fig. 7
Non-repetitive avalanche energy per leg
SYMBOL
I_F(AV)
I_FSM
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 154 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
T_J = 25 °C, I_AS = 1 A, L = 2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
10
20
1030
180
1.0
1
UNITS
A
mJ
A
Revision: 29-Jul-14
1
Document Number: 94490
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000