VS-209CNQPBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low forward voltage drop

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VS-209CNQ...PbF Series
Vishay Semiconductors
High Performance Schottky Rectifier, 200 A
TO-244
Lug
terminal
anode 1
Lug
terminal
anode 2
Base common
cathode
PRODUCT SUMMARY
I_F(AV)
V_R
Package
200 A
135 V, 150 V
TO-244
Circuit
Two diodes common cathode
FEATURES
• 175 °C T_J operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-209CNQ center tap Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
Range
I_FSM
t_p = 5 μs sine
V_F
100 A_pk, T_J = 125 °C (per leg)
T_J
Range
VALUES
200
135/150
10 000
0.71
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-209CNQ135PbF
135
VS-209CNQ150PbF
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current per leg

See fig. 5
per device
I_F(AV)
50 % duty cycle at T_C = 131 °C, rectangular
waveform
100
200
Maximum peak one cycle non-repetitive surge
current per leg

See fig. 7
I_FSM
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and
with rated V_RRM
applied
10 000
1200
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
E_AS
T_J = 25 °C, I_AS = 5.5 A, L = 1 mH
15
Current decaying linearly to zero in 1 μs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R
1
typical
UNITS
A
mJ
A
Revision: 23-Sep-15
1
Document Number: 94156
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000