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VS-201CNQ050PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low forward voltage drop
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VS-201CNQ050PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 200 A
TO-244
PRODUCT SUMMARY
IF(AV)
VR
Package
Circuit
200 A
50 V
TO-244 (TO-244AB)
Two diodes common cathode
FEATURES
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-201CNQ050PbF center tap Schottky rectifier
module has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, converters, freewheeling diodes, welding, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF
100 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
200
50
16 000
0.58
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
201CNQ050PbF
50
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per device
per leg
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 146 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 17 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
200
100
16 000
2000
145
20
UNITS
A
A
mJ
A
Revision: 18-Jul-12
1
Document Number: 93991
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000