VS-1N3879 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Fast Recovery Diodes (Stud Version), 6 A, 12 A

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VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
Fast Recovery Diodes (Stud Version), 6 A, 12 A
DO-203AA (DO-4)
PRODUCT SUMMARY
I_F(AV)
Package
Circuit configuration
6 A, 12 A
DO-203AA (DO-4)
Single diode
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC^® types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
1N3879(R) TO 1N3883(R)
1N3889(R) TO 1N3893(R)
6 ⁽¹⁾
I_F(AV)
T_C maximum
100
12 ⁽¹⁾
100
I_F(RMS)
I_FSM
50 Hz
60 Hz
9.5
72
75 ⁽¹⁾
19
145
150 ⁽¹⁾
50 Hz
I²t
60 Hz
26
103
23
94
I²ïƒ–t
363
856
V_RRM
Range
50 to 400 ⁽¹⁾
50 to 400 ⁽¹⁾
t_rr
See Recovery Characteristics table See Recovery Characteristics table
T_J
Range
-65 to +150
-65 to +150
Note
(1) _JEDEC® _{registered values}
UNITS
A
°C
A
A
A²s
I²ïƒ–s
V
ns
°C
Revision: 28-May-15
1
Document Number: 93144
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