VS-1N1A Datasheet, PDF (1/5 Pages) Vishay Siliconix – Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

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VS-1N1...A, VS-1N36..A Series
Vishay Semiconductors
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A
DO-203AA (DO-4)
PRODUCT SUMMARY
I_F(AV)
Package
Circuit configuration
12 A
DO-203AA (DO-4)
Single diode
FEATURES
• Voltage ratings from 50 V to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_F(AV)
T_C
50 Hz
I_FSM
60 Hz
I²t
50 Hz
60 Hz
T_J
V_RRM
Range
Note
• JEDEC^® registered values are in bold
VALUES
12
150
230
240
260
240
-65 to 200
50 to 1000
UNITS
A
°C
A
A²s
°C
V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
V_RRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
(T_C = -65 °C TO 200 °C)
V
V_R(RMS), MAXIMUM RMS
REVERSE VOLTAGE
(T_C = -65 °C TO 200 °C)
V
V_RSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
(T_C = -65 °C TO 200 °C)
V
VS-1N1199A
50
35
100
VS-1N1200A
100
70
200
VS-1N1201A
150
105
300
VS-1N1202A
200
140
350
VS-1N1203A
300
210
450
VS-1N1204A
400
280
600
VS-1N1205A
500
350
700
VS-1N1206A
600
420
800
VS-1N3670A
700
490
VS-1N3671A
800
560
VS-1N3672A
900
630
900
1000
1100
VS-1N3673A
1000
700
1200
Notes
• JEDEC registered values are in bold
• Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
V_RM, MAXIMUM DIRECT
REVERSE VOLTAGE
(T_C = -65 °C TO 200 °C)
V
50
100
150
200
300
400
500
600
700
800
900
1000
Revision: 18-May-15
1
Document Number: 93493
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000